Résumé

This work is focused on the assessment of several AlxGa1-xN/AlyGa1-yN high electron mobility transistors on Si. The evolution of electron density, electron mobility, breakdown electric field, current densities and on/off ratio as a function of the Al fraction in the channel is reported. The temperature dependence of current densities, threshold voltage and subthreshold slope was studied. In addition, breakdown voltage measurements were performed as a function of gate-drain distance. The data are compared with previous works from the literature using other substrates.